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| ON Semiconductor ) NPN PNP Plastic High Power Silicon Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. BD809 BD810 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS * DC Current Gain -- hFE = 30 (Min) @ IC = 2.0 Adc IIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII I I II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCBO VEBO IC IB Value 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current 5.0 10 6.0 Total Device Dissipation TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 90 720 Watts mW/_C _C TJ, Tstg -55 to +150 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol JC Max Unit Thermal Resistance, Junction to Case 1.39 _C/W (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 1 Publication Order Number: BD809/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I II I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIII I I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Current-Gain Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Pulse Test: Pulse Width x 300 s, Duty Cycle x 2.0%. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Base-Emitter On Voltage* (IC = 4.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage* (IC = 3.0 Adc, IB = 0.3 Adc) DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 V) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) 0.1 IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS) 0.3 10 1 3 1 Figure 1. Active Region DC Safe Operating Area (see Note 1) 3 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Characteristic 5 ms dc 1 ms http://onsemi.com BD809 BD810 .5 ms 1 ms 100 2 10 20 30 40 50 60 70 80 90 0 VCE(sat) VBE(on) Symbol BVCEO 0 ICBO IEBO hFE Figure 2. Power-Temperature Derating Curve fT 25 50 Min 1.5 30 15 80 -- -- -- -- TC, CASE TEMPERATURE (C) 75 100 Max 1.6 1.1 2.0 1.0 -- -- -- -- -- 125 150 mAdc mAdc MHz Unit Vdc Vdc Vdc 175 BD809 BD810 NPN BD809 500 TJ = 150C 200 hFE, DC CURRENT GAIN 100 50 20 10 5.0 0.2 VCE = 2.0 V hFE, DC CURRENT GAIN 25C -55C 200 100 50 20 10 10 20 5.0 0.2 VCE = 2.0 V 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 25C -55C TJ = 150C 500 PNP BD810 0.5 5.0 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 10 20 IC = 1.0 A 4.0 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 IC = 1.0 A 4.0 A 8.0 A TJ = 25C 8.0 A 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 4. Collector Saturation Region 2.8 2.4 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 0.8 0.4 0 0.2 VBE(sat) = IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) TJ = 25C V, VOLTAGE (VOLTS) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) TJ = 25C Figure 5. "On" Voltages http://onsemi.com 3 BD809 BD810 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE JC(t) = r(t) JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.5 1.0 2.0 3.0 5.0 t, PULSE WIDTH (ms) 20 30 50 SINGLE P(pk) PULSE t1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.02 0.03 0.05 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 0.1 0.2 0.3 Figure 6. Thermal Response Note 1: There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 4 BD809 BD810 Notes http://onsemi.com 5 BD809 BD810 Notes http://onsemi.com 6 BD809 BD810 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 7 BD809 BD810 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BD809/D |
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